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savantic semiconductor product specification silicon npn power transistors 2SC3626 description with to-220fa package high collector breakdown voltage excellent switching times applications switching regulator and high voltage switching applications high speed dc-dc converter applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak 10 a i b base current 4 a t a =25 2.0 p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3626 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 500 v v cesat collector-emitter saturation voltage i c =4 a;i b =0.8 a 1.0 v v besat base-emitter saturation voltage i c =4 a;i b =0.8 a 1.5 v i cbo collector cut-off current v cb =400v ;i e =0 100 a i ebo emitter cut-off current v eb =7v ;i c =0 1 ma h fe-1 dc current gain i c =1a ; v ce =5v 15 h fe-2 dc current gain i c =4a ; v ce =5v 10 switching times t r rise time 1.0 s t s storage time 2.5 s t f fall time v cc < 200v,r l =50 ? i c =4a ;i b1 =-i b2 =0.4 a 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3626 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)

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